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Bio

NOBUO HAYASAKA, TOSHIBA MEMORY
CHIEF TECHNOLOGY OFFICER

Dr. Nobuo Hayasaka received his B.S, M.S. and Dr. degrees from Tohoku University in 1979, 1981 and 1984 respectively. In 1984 he joined Toshiba Corporation and has been engaged in development of semiconductor process for memory and logic devices. He was a General Manager of Advanced Memory Development Center, and had directed NAND products development from 2007 to 2013. He was a Corporate Vice President of Toshiba Corporation and an Executive Vice President and CTE of Storage & Electronic Devices Solution Company of Toshiba Corp. He presently serves as a Chief Technology Officer of Toshiba Memory Corporation.
He served as a member of Organizing Committee of IITC (International Interconnect Technology Conference) from 1998 to 2003, and he was a General Chair of IITC in 2003.  He served as a member of Organizing Committee of a A-SSCC 2016, and was a Conference Chair.

 

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Presentation abstract

MEMORY TECHNOLOGY CHALLENGES FOR FUTURE CONNECTED WORLD

Now in the IoT era, data explosion happens and more and more data are generated by the second. It is predicted that over 40ZB (zetta-bytes) data will be yearly generated in 2020. These data are continuously stored not locally but remotely in Clouds. By utilizing these “Big Data”, people are making innovations in several fields by using emerging technology such as Artificial Intelligence (AI).
In order to accommodate such a big data, increasing storage density and improving the performance are required. That leads requirement of high density and high performance (latency, reliability, power, etc.) memory devices with keeping lower cost.
NAND flash memory has already shifted to 3D structure for density requirement and Storage Class Memory (SCM) appeared to enhance the computing system performance. However, still there are lots of technology challenges to keep scaling for the future connected world.

 

 

 

 

 

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