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Joff Derluyn    
   

 

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Bio

JOFF DERLUYN, EPIGAN
CO-FOUNDER & CTO

Dr. Joff Derluyn is a co-founder and the CTO of EpiGaN (www.epigan.com).

In that capacity, he is responsible for the R&D roadmap, IP strategy and main responsible for bilateral and public funded projects (ESA, EU-FP7, EU-H2020, EU-ECSEL).

Joff has over 20 years of experience in MOCVD epitaxy and device processing of III-N and III-V semiconductor materials and devices, holds over 25 granted patents in the field of III-N electronics and is author or co-author of over 100 peer-reviewed publications. He acts as reviewer for high impact scientific journals such as APL, EDL and TED and is a member of NEREID expert committee to set up a roadmap for wide bandgap semiconductors.

Prior to founding EpiGaN, Joff was at imec as the responsible for the GaN devices and characterization team. He holds a PhD in electrical engineering from Ghent University on the topic of epitaxial growth of dilute nitrides.

 

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Presentation abstract

GALLIUM-NITRIDE ON SILICON FOR HIGHLY EFFICIENT POWER SWITCHING

One of the prerequisites to enable distributed power generation and storage is the availability of highly efficient power conversion circuits. There is a general consensus that the switches that drive such circuits need to be built from wide-bandgap materials. Taking cost considerations into account, one easily comes to GaN-on-Silicon technology as a major contender. This talk will give an overview of the current state of the art of GaN power switching devices as well as an outlook on what is to come next for this exciting technology.

 

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